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Electronic transport in the strongly correlated surface Si(111)7×7

Keywords:

A.B. Odobescu – Junior Research Scientist, Kotel’nikov Institute of Radio Engineering, and Electronics Russian Academy of Sciences. E-mail: arty@cplire.ru
S.V. Zaitcev-Zotov – Dr. Sc. (Phys.-Math.), Head of Laboratory, Kotel’nikov Institute of Radio Engineering, and Electronics Russian Academy of Sciences


The conductivity of the surface Si(111)7×7 as a function of temperature (35–300 K) has been studied. The surface conductivity is characterized by the Efros-Shklovskii law. It was supposed, that free electrons on the surface are localized on the dimers, which forms from the center adatoms, and surface conductance is associated with hopping conductance from occupied to an empty dimer. The experimentally obtained localization length of the electron matches the dimer size.
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