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Dependence of electroconductivity a-Si:H/c-Si structures on preliminary plasma treatment of single-crystalline silicon

Keywords:

D.V. Nefedov – Ph.D. (Eng.), Researcher, Saratov branch of the Kotel’nikov Institute of Radio Engineering, and Electronics Russian Academy of Sciences. E-mail: nefedov_dv@rambler.ru
S.Y. Suzdaltsev – Ph.D. (Eng.), Senior Researcher, Saratov branch of the Kotel’nikov Institute of Radio Engineering, and Electronics Russian Academy of Sciences


Influence of preliminary treatment of single-crystalline silicon in argon and chladone plasma on change of electroconductivity a-Si:H/c-Si are realized. Essential influence on electroconductivity does preliminary treatment of chladone plasma are established. The samples will use as substrates for field-emission diamond-graphite structures.
References:

  1. Turishhev S. Ju., Terexov V. A., Parinova E. V. i dr. / Izvestiya vuzov. Ser. Materialy' e'lektronnoj texniki. 2011. T. 2. S. 3 – 10.
  2. Ivanovskij G. F., Petrov V. I. Ionno-plazmennaya obrabotka materialov. M.: Radio i svyaz'. 1986. 232 s.

June 24, 2020
May 29, 2020

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