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Epitaxial growth of GaAs on NiSb

Keywords:

S.A. Aitkhozhin – Ph.D. (Phys.-Math.), Senior Researcher, Kotelnikov IRE RAS (Fryazino Branch) A.S. Artemov – Dr.Sc. (Phys.-Math.), Professor, Kotelnikov IRE RAS (Fryazino Branch) P.S. Belousov – Ph.D. (Chem.), Kotelnikov IRE RAS (Fryazino Branch) M.A. Bobilev – Junior Researcher, Kotelnikov IRE RAS (Fryazino Branch) E.V. Kaevitser – Ph.D. (Phys.-Math.), Senior Researcher, Kotelnikov IRE RAS (Fryazino Branch) V.E. Lyubchenko – Dr.Sc. (Phys.-Math.), Professor, Head of Laboratory, Kotelnikov IRE RAS (Fryazino Branch) K.P. Petrov – Ph.D. (Eng.), Kotelnikov IRE RAS (Fryazino Branch) Yu.Sh. Temirov – Ph.D. (Phys.-Math.), Kotelnikov IRE RAS (Fryazino Branch) S.B. Farafonov – Ph.D. (Eng.), Kotelnikov IRE RAS (Fryazino Branch)


In this work the growth conditions were studied for epitaxial gallium arsenide layers, grown at the surface of monocrystallic compound NiSb – intermetallide with metallic type of conductivity. Thin GaAs layers were grown with molecular-beam epitaxy, in the regimes, conventionally used for the homo-epitaxial GaAs structure fabrication. The investigation of GaAs film structure and morphology shows, that during the growth process it is modified from the textured polycrystal to more ordered layer with clearly seen point reflex system at the electronogramme.
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