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Low-temperature conductivity of Si(111)-(7x7) surface


A.A. Mayzlakh – Student, Moscow Institute of Physics and Technology, Engineer, Kotelnikov IRE RAS. E-mail: S.V. Zaitsev-Zotov – Dr.Sc. (Phys.-Math.), Head of Laboratory, Kotelnikov IRE RAS

Conductivity of Si(111)-(7x7) surface reconstruction was studied in temperature range 10-320 K. Measurements were provided with the two-probe method. Our results demonstrate that conductivity dependence is represented with Efros–Shklovskii law with EES = 0,55 eV.


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