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Study of the aspects of the use of high-power GaN transistors in microwave devices

Keywords:

P.A. Tushnov – Main Technologist, PJSC «Radiofizika» (Moscow), Lecturer of Department, Moscow Aviation Institute (National Research University) V.S. Berdyev – Ph. D. (Eng.), Head of Department, PJSC «Radiofizika» (Moscow), Lecturer of Department, Moscow Institute of Physics and Technology (State University) O.A. Gevorgyan – Engineer, PJSC «Radiofizika» (Moscow)


The paper considers the aspects of using high-power GaN transistors in microwave devices. It is demonstrated that the studied operating modes of GaN transistors differ substantially from the optimal operating modes of GaAs transistors. The conclusions and recommended optimal operating modes of GaN transistors are confirmed by experimental results of the study of a high-power S band amplifier. In this paper we compare optimal operating modes of bipolar transistor amplifiers with operating modes of GaN amplifiers. Recommendations for optimization of the operating modes are elaborated. The paper discusses that the control of the output power level of the RTM microwave channel can be performed by changing the power supply of the amplifier over a wide range, therefore it is required to apply the technology for output power control. A special TROC software package is aimed to provide control of the RTM and APAA according to TPOC and to calibrate RTM on the basis of the output power of the microwave channels. This software package includes software for RTM, software for the APAA control unit and technological software of the automated stand for RTM calibration. The use of the TROC including circuit design, technological and software solutions gives a principally new quality - to generate a predetermined distribution of the radiated power over the APAA aperture in real time.
References:

 

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