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Influence of film-electrode interface property on Au/PZT/Pt ferroelectric capasitor nanostructures leakage current Nucleation, first growth stages and structure of nano-sized polymer coatings deposited from active gas phase

DOI 10.18127/j22250999-201902-02

Keywords:

A.N. Antonovich ‒ Post-graduate Student,  MIREA ‒ Russian Technological University (Moscow, Russia)
Е-mail: alexant@phys.msu.ru
S.V. Pahomov ‒ Post-graduate Student, MIREA ‒ Russian Technological University (Moscow, Russia)
Е-mail: 321ru@mail.ru
A.A. Petrushin ‒ Post-graduate Student, MIREA ‒ Russian Technological University (Moscow, Russia)
Е-mail: babaganusshh@gmail.com
Yu.V. Podgorny ‒ Ph.D. (Eng.), Leading Research Scientist, MIREA ‒ Russian Technological University (Moscow, Russia)
E-mail: podgsom_2004@mail.ru


The lead titanate-zirconate thin (PZT) films are promising material for the creation of new-generation micro- and nano-electronics prod-ucts and have great practical interest. Significant part of the applications of ferroelectric films are based on using them as thin-film capa-citors including nonvolatile memory devices. The film/electrode interfaces have effect on the FeRAM memory characteristics (fatigue, imprint, retention and leakage current) also. It is necessary to identify the type of contact formed by a metal electrode and a ferroelec-tric film in order to reliably determine the electrical properties of a capacitor is the subject of this work. Ferroelectric capacitor Au/PZT/Pt is used as the object of study. The investigation of the leakage current was carried out by the steady-state method using a picoammeter with an integrated constant voltage source Hewlett Packard 4140B. Analysis of the current-voltage characteristics of the thin-film capaci-tor Au/PZT/Pt demonstrate that structure manifests itself as a diode connected in the forward and reverse direction with negative and positive polarity, respectively. Electron beam induced current method is used for reliable interpretation of the obtained current-voltage characteristics and interfaces᾽s electrophysical properties determination. The local electric fields were investigated at the film/electrode interfaces. An ohmic-type contact was identified for Au/PZT interface. It has been demonstrated that the interface PZT/Pt section will manifest itself as a Schottky contact, since a positive or negative bias applied to the lower electrode will increase or decrease, respec-tively, the energy barrier for carrier injection from platinum. So it is shown that the leakage current of the thin-film Au/PZT/Pt capacitors indicates a significant influence of the electrode/ferroelectric interfaces, i.e. on charge transport.

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