Publishing house Radiotekhnika

"Publishing house Radiotekhnika":
scientific and technical literature.
Books and journals of publishing houses: IPRZHR, RS-PRESS, SCIENCE-PRESS

Тел.: +7 (495) 625-9241


Influence of film-electrode interface property on Au/PZT/Pt ferroelectric capasitor nanostructures leakage current Nucleation, first growth stages and structure of nano-sized polymer coatings deposited from active gas phase

DOI 10.18127/j22250999-201902-02


A.N. Antonovich ‒ Post-graduate Student,  MIREA ‒ Russian Technological University (Moscow, Russia)
S.V. Pahomov ‒ Post-graduate Student, MIREA ‒ Russian Technological University (Moscow, Russia)
A.A. Petrushin ‒ Post-graduate Student, MIREA ‒ Russian Technological University (Moscow, Russia)
Yu.V. Podgorny ‒ Ph.D. (Eng.), Leading Research Scientist, MIREA ‒ Russian Technological University (Moscow, Russia)

The lead titanate-zirconate thin (PZT) films are promising material for the creation of new-generation micro- and nano-electronics prod-ucts and have great practical interest. Significant part of the applications of ferroelectric films are based on using them as thin-film capa-citors including nonvolatile memory devices. The film/electrode interfaces have effect on the FeRAM memory characteristics (fatigue, imprint, retention and leakage current) also. It is necessary to identify the type of contact formed by a metal electrode and a ferroelec-tric film in order to reliably determine the electrical properties of a capacitor is the subject of this work. Ferroelectric capacitor Au/PZT/Pt is used as the object of study. The investigation of the leakage current was carried out by the steady-state method using a picoammeter with an integrated constant voltage source Hewlett Packard 4140B. Analysis of the current-voltage characteristics of the thin-film capaci-tor Au/PZT/Pt demonstrate that structure manifests itself as a diode connected in the forward and reverse direction with negative and positive polarity, respectively. Electron beam induced current method is used for reliable interpretation of the obtained current-voltage characteristics and interfaces᾽s electrophysical properties determination. The local electric fields were investigated at the film/electrode interfaces. An ohmic-type contact was identified for Au/PZT interface. It has been demonstrated that the interface PZT/Pt section will manifest itself as a Schottky contact, since a positive or negative bias applied to the lower electrode will increase or decrease, respec-tively, the energy barrier for carrier injection from platinum. So it is shown that the leakage current of the thin-film Au/PZT/Pt capacitors indicates a significant influence of the electrode/ferroelectric interfaces, i.e. on charge transport.

  1. Izyumskaya N. et. al. Processing, Structure, Properties, and Applications of PZT Thin Films // Critical Reviews in Solid State and Materials Sciences. 2007. V. 32. Is. 34. P. 111–202.
  2. Ren T-L., Zhang L-T., Liu L-H., Li Z-L. Studies of a Pt/PZT/Pt sandwich structure for FeRAM applications using sol-gel processing // Integrated Ferroelectrics. 2001. V. 39. P. 215–222.
  3. Vorotilov K.A., Sigov A.S. Segnetoelektricheskie zapominayushchie ustrojstva // Fizika tverdogo tela. 2012. T. 54. № 5. S. 843–848.
  4. Wang Y. et. Al. Ultrathin Ferroelectric Films: Growth, Characterization, Physics and Applications // Materials. 2014. V. 7. P. 6377–6485.
  5. Chen Y., Mclntyre P.C. Effects of chemical stability of platinum/lead zirconate titanate and iridium/lead zirconate titanate interfaces on ferroelectric thin film switching reliability // Appl. Phys. Lett. 2007. V. 91. P. 232906–13.
  6. Lee H.S. Ferroelectric properties of Pb(Zr,Ti)O3 thin films deposited on annealed IrO2 and Ir bottom electrodes// Journal Vac. Sci. Tech. A. 1999. V. 17. P. 2939–43.
  7. Angadi M. O. et. al. The role of electrode material and polarization fatigue on electron emission from ferroelectric Pb(Zrx Ti1-x)O3 cathodes // Appl. Phys. Lett. 2000. V. 77. P. 2659–2661.
  8. Nagaraj B. et al. Leakage current mechanisms in lead-based thin-film ferroelectric capacitors // Physical Review B. 1999. V. 59. № 24. P. 16022.
  9. Pintilie L. et al. The influence of the top-contact metal on the ferroelectric properties of epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 thin films // J. Appl. Phys. 2008. V. 104. P. 114101.
  10. Vorotilov, K.A., Sigov, A.S., Seregin, D.S. et al. Crystallization behaviour of PZT in multilayer heterostructures // Phase Transitions: Multinatl. J. 2013. V. 86. № 11. P. 1152-1165.
  11. Podgornyj YU.V., Vorotilov K.A., Sigov A.S., Lavrov P.P. Vliyanie toka utechki i relaksacionnyh poter' na opredelenie parametrov gisterezisa segnetoelektricheskih nanostruktur // Nanomaterialy i nanostruktury  XXI vek. 2016. T. 7. № 2. S. 20–29.
  12. Nagaraj B., Aggarwal S., Ramesh R. Influence of contact electrodes on leakage characteristics in ferroelectric thin films // Journal of Applied Physics. 2001. V. 90. № 1. P. 375–382.
  13. Sigov A., Podgorny Y., Vorotilov K., Vishnevsky A. Leakage currents in ferroelectric thin films. // Phase Transition. 2013. V. 86. № 11. P. 1144–1151.
  14. Podgorny Y., Vorotilov K., and Sigov A. Estimation of steady-state leakage current in polycrystalline PZT thin films. // AIP Advances. 2016. V. 6. P. 095025.
  15. Podgorny Y.V., Seregin D. S., Sigov A.S. and Vorotilov K.A. Depolarization Currents in Ferroelectric Films. // Ferroelectrics. 2012. V. 439. P. 56–61.
  16. Antonovich A.N., Petrushin A.A., Podgornyj YU.V. Issledovanie kontaktnyh yavlenij v segnetoelektricheskih kondensatornyh nanostrukturah Ir/PZT/Pt // Nanomaterialy i nanostruktury  XXI vek. 2018. T. 8. № 4. S. 21–27.
  17. Leamy H. J. Charge collection scanning electron microscopy // J. Appl. Phys. 1982. V. 53. № 6. Зю 51–86.
  18. Yakimov E. Electron beam induced current investigations of electrical ingomogeneities with high spatial resolution // Scanning Microscopy. 1992. V. 6. № 1. P. 81–96.
  19. Alig R., Bloom S. Electron-hole-pair creation energies in semiconductors // Physical Review Letters. 1975. V. 35. P. 1522.
  20. Pintilie L., Alexe M. Metal-Ferroelectric-Metal heterostructures with Schottky contacts. Influence of the ferroelectric properties // J. Appl. Phys. 2005. V. 98. P. 124103–8.
  21. Pi-chun Juan T. Temperature dependence of the current conduction mechanisms in ferroelectric Pb(Zr0.53,Ti0.47)O3 thin films // J. Appl. Phys. 2004. V. 95. P. 3120–3125.
  22. Klein A. Interface Properties of Dielectric Oxides // J. Am. Ceram. Soc. 2016. V. 99. P. 369–387.
  23. Yang Y.S. Schottky barrier effects in the electronic conduction of sol–gel derived lead zirconate titanate thin film capacitors // J. Appl. Phys. 1998. V. 84. P. 5005–11.
  24. Abou-Ras D. et. al. Electron-beam-induced current measurements with applied bias provide insight to locally resolved acceptor concentrations at pn-junctions // AIP Advances. 2015. V. 5. P. 077191.
  25. Donolato C. A reciprocity theorem for charge collection // Appl. Phys. Lett. 1985. V. 46. P. 270–272.
  26. Kurniawan O., Ong K. S. Choice of Generation Volume Models for Electron Beam Induced Current Computation // IEEE Transactions on Electron Devices. 2009. V. 56. № 5. P. 1094–1099.
  27. Haney P.M. et. al. Electron beam induced current in the high injection regime // Nanotechnology. 2015. V. 26. P. 295401–6.

© Издательство «РАДИОТЕХНИКА», 2004-2017            Тел.: (495) 625-9241                   Designed by [SWAP]Studio