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Influence of formation modes and heat treatment conditions on the phase composition and structure of silicon-carbon coatings deposited by ion-beam sputtering

DOI 10.18127/j22250999-201902-04

Keywords:

A. S. Rudenkov - Ph.D (Eng.), Leading Research Scientist, International Chinese-Belarusian Scientific Laboratory on Vacuum-Plasma Technology, Francisk Skorina Gomel State University (Republic Belarus)
E-mail: arudenkov05@gmail.com
A.V. Rogachev - Dr.Sc. (Chem.), Professor, Head of Department, International Chinese-Belarusian Scientific Laboratory on Vacuum-Plasma Technology, Francisk Skorina Gomel State University (Republic Belarus)
E-mail: rogachevav@mail.ru
A.N. Kupo – Ph.D. (Eng.), Head of Department, Francisk Skorina Gomel State University (Gomel, Republic Belarus)
E-mail: kupo@gsu.by
S.M. Zavadski – Ph.D (Eng.), Leading Research Scientist, Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus
E-mail: szavad@bsuir.by
D.A. Golosov – Ph.D. (Eng.), Head of Department, Belarusian State University of Informatics and Radioelectronics (Minsk, Republic Belarus)
P.A. Lychnikov - Research Scientist, MIREA – Russian Technological University (Moscow)
Е-mail: xamdex@gmail.com


The effect of the formation and heat treatment of silicon-carbon coatings deposited by ion-beam sputtering of silicon carbide on their morphology, chemical and phase composition is determined. It has been established that an increase in the power of the ion source from 432 W to 738 W leads to a decrease in the sp3/sp2 phase ratio by 1.7 times and an increase in the Si-C / Si-O bond ratio by 1.9 times. With an increase in the annealing temperature, a decrease in the carbon concentration, a decrease in the content of C – Si – O and Si – C bonds, and an increase in the concentration of silicon oxide in the coating are observed. Coatings formed at a source power of 738 W have a higher heat resistance (a slight change in the ID/IG ratio), which is caused by a higher relative concentration of silicon carbide (Si-C / Si-O = 0.15).

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